Epitaxial Bi/GaAs diodes via electrodeposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2138-2143

  Bao, Zhi Liang ^a   Kavanagh, Karen L ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; BISMUTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

AMMONIUM SULFATE; BARRIER HEIGHTS; BISMUTH NITRATE; CAPACITANCE-VOLTAGE CHARACTERISTICS; SURFACE ORIENTATION;

SEMICONDUCTOR DIODES;

EID: 33746580732     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2218874     Document Type: Article

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