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Materials Science and Engineering: B

Volumn 122, Issue 2, 2005, Pages 133-139

Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

(2) Karatas S a Altindal, S b

a KAHRAMANMARAS SUTCU IMAM UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

Author keywords

Barrier height; I V characteristics; Schottky diodes; Temperature dependence

Indexed keywords

CHARACTERIZATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MIS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

BARRIER HEIGHTS; I-V CHARACTERISTICS; SERIES RESISTANCE; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 23144458062 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.05.018 Document Type: Article

Times cited : (88)

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