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Volumn 122, Issue 2, 2005, Pages 133-139
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Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range
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Author keywords
Barrier height; I V characteristics; Schottky diodes; Temperature dependence
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Indexed keywords
CHARACTERIZATION;
ELECTRIC POTENTIAL;
ELECTRON TUNNELING;
MIS DEVICES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR LASERS;
BARRIER HEIGHTS;
I-V CHARACTERISTICS;
SERIES RESISTANCE;
TEMPERATURE DEPENDENCE;
SCHOTTKY BARRIER DIODES;
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EID: 23144458062
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2005.05.018 Document Type: Article |
Times cited : (87)
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References (35)
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