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Volumn 122, Issue 2, 2005, Pages 133-139

Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

Author keywords

Barrier height; I V characteristics; Schottky diodes; Temperature dependence

Indexed keywords

CHARACTERIZATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MIS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

EID: 23144458062     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.05.018     Document Type: Article
Times cited : (87)

References (35)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.