Temperature dependence of the electrical and interface states of the Sn/Rhodamine-101/p-Si Schottky structures

Synthetic Metals

Volumn 159, Issue 3-4, 2009, Pages 347-351

  Karataş, Ş ^a   Cakar M ^a  

^a KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

Author keywords

Barrier heights; Interface states densities; Organic semiconductor inorganic semiconductor structures; Rectification

Indexed keywords

DISTILLATION; ELECTRIC CONDUCTIVITY; ORGANIC COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

BARRIER HEIGHTS; CURRENT VOLTAGES; ELECTRICAL CHARGES; ENERGY DISTRIBUTIONS; EVAPORATION PROCESS; FORWARD BIAS; I-V CHARACTERISTICS; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATES DENSITIES; NON-POLYMERIC; ORGANIC SEMI CONDUCTORS; ORGANIC SEMICONDUCTOR/INORGANIC SEMICONDUCTOR STRUCTURES; P-TYPE SI; POTENTIAL BARRIERS; RECTIFICATION; SCHOTTKY STRUCTURES; SPACE CHARGES; TEMPERATURE DEPENDENCES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 60449115324     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2008.11.025     Document Type: Article

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