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Volumn 506, Issue 1, 2010, Pages 51-56

Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range

Author keywords

Barrier inhomogeneities; Crystal growth; Double Gaussian distribution; GaSe; Layered crystal; Schottky diode; Temperature dependent I V measurement

Indexed keywords

BARRIER INHOMOGENEITIES; GASE; GAUSSIANS; LAYERED CRYSTALS; SCHOTTKY DIODES; TEMPERATURE DEPENDENT I-V MEASUREMENT;

EID: 77956094138     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.07.034     Document Type: Article
Times cited : (12)

References (55)
  • 42
    • 77956094522 scopus 로고
    • Ph.D. Thesis, Atatürk University Graduate School of Natural & Applied Science
    • B. Abay, Ph.D. Thesis, Atatürk University Graduate School of Natural & Applied Science, 1994.
    • (1994)
    • Abay, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.