Determination of interface state density of PtSi/strained-Si 1-xGex/Si Schottky diodes

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 6, 1998, Pages 403-407

  Chattopadhyay, S ^a   Bera, L K ^a   Maiti, C K ^a   Ray, S K ^a   Bose, P K ^b   Dentel, D ^c   Kubler, L ^c   Bischoff, J L ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b JADAVPUR UNIVERSITY   (India)

^c UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; BAND STRUCTURE; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

CAPACITANCE VOLTAGE TECHNIQUE; INTERFACE STATE DENSITY; PLATINUM SILICIDE; SILICON GERMANIDE;

SILICON ALLOYS; SCHOTTKY BARRIER DIODES;

EID: 0032285520     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008948500597     Document Type: Article

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