Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 606-611

  Ru, Guo Ping ^a,b   Van Meirhaeghe, R L ^a   Forment, S ^a   Jiang, Yu Long ^a   Qu, Xin Ping ^b   Zhu, Shiyang ^b   Li, Bing Zong ^b  

^a GHENT UNIVERSITY   (Belgium)

^b FUDAN UNIVERSITY   (China)

Author keywords

Barrier height inhomogeneity; Ni silicide; Schottky diode; Ti capping

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; NICKEL; PARAMETER ESTIMATION;

BARRIER HEIGHT INHOMOGENEITY; NI SILICIDE; SCHOTTKY DIODES; TI CAPPING;

SCHOTTKY BARRIER DIODES;

EID: 13644257023     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.12.005     Document Type: Article

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