New aspects of the temperature dependence of the current in inhomogeneous Schottky diodes

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages

  Osvald, J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; INTEGRATION; ITERATIVE METHODS; LOW TEMPERATURE EFFECTS; THERMAL EFFECTS;

IDEALITY FACTOR; TEMPERATURE DEPENDENCE; THERMIONIC THEORY;

SCHOTTKY BARRIER DIODES;

EID: 0037395792     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/103     Document Type: Letter

References (11)

1. Chand S 2002 Semicond. Sci. Technol. 17 L36
2. Song Y P, Van Meirhaeghe R L, Laflère W H and Cardon F 1986 Solid-State Electron. 29 633
3. Werner J H and Güttler H H 1991 J. Appl. Phys. 69 1522
4. Chand S and Kumar J 1996 Semicond. Sci. Technol. 11 1203
5. Chand S and Kumar J 1996 J. Appl. Phys. 80 288
6. Chand S and Kumar J 1997 Semicond. Sci. Technol. 12 899
7. Zhu S, Van Meirhaeghe R L, Detavernier C, Cardon F, Ru G P, Qu X P and Li B Z 2000 Solid-State Electron. 44 663
8. Jiang Y L, Ru G P, Lu F, Qu X P, Li B Z, Li W and Li A Z 2002 Chin. Phys. Lett. 19 553
9. Jiang Y L, Ru G P, Lu F, Qu X P, Li B Z and Yang S 2003 J. Appl. Phys. 93 866
10. Abay B, Çankaya G, Güder H S, Efeoǧlun H and Yoǧurtcu Y K 2003 Semicond. Sci. Technol. 18 75
11. Osvald J and Dobročka E 1996 Semicond. Sci. Technol. 11 1198