Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

Vacuum

Volumn 83, Issue 12, 2009, Pages 1470-1474

  Asubay, S ^a   Güllü, Ö ^b   Turut A ^c  

^a DICLE UNIVERSITY   (Turkey)

^b BATMAN UNIVERSITY   (Turkey)

^c ATATÜRK UNIVERSITY   (Turkey)

Author keywords

InP semiconductor; Metal semiconductor metal contacts; Schottky barrier inhomogeneity; Schottky diodes

Indexed keywords

BARRIER HEIGHTS; CURRENT TRANSPORT; DIODE PARAMETERS; EXPERIMENTAL DATA; FITTING PARAMETERS; IDEALITY FACTORS; INHOMOGENEITIES; INP; INP SEMICONDUCTOR; LATERAL INHOMOGENEITY; LINEAR RELATIONSHIPS; METAL DEPOSITION; METAL-INDUCED GAP STATE; METAL-SEMICONDUCTOR CONTACTS; METAL-SEMICONDUCTOR-METAL CONTACTS; SCHOTTKY BARRIER INHOMOGENEITY; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; VACUUM CONDITION;

CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRONEGATIVITY; LEAD; METALS; PHOTODETECTORS; SEMICONDUCTOR DIODES; THERMIONIC EMISSION; TIN; VACUUM DEPOSITION; ZINC;

SCHOTTKY BARRIER DIODES;

EID: 67650707896     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.06.050     Document Type: Article

References (44)

1. Rhoderick EH, Williams RH. Metal-semiconductor contacts, Clarendon Press, Oxford.
2. Williams R.H., and Robinson G.Y. Physics and chemistry of III-V compound semiconductor interfaces. In: Wilmsen C.W. (Ed) (1985), Plenum Press, New York
3. Mönch W. Semiconductor surfaces and interfaces. 3rd ed. (2001), Springer, Berlin
4. Potje-Kamloth K. Chem Rev 108 (2008) 367
5. Bayhan H., and Ercelebi C. Semicond Sci Technol 12 (1997) 600-608
6. Behnam A., Johnson J., Choi Y., Noriega L., Ertosun M.G., Wu Z., et al. J Appl Phys 103 (2008) 114315
7. Dimitruk N.L., Borkovskaya O.Y., Dimitruk I.N., Mamykin S.V., Horvath Zs.J., and Mamontova I.B. Appl Surf Sci 190 (2002) 455
8. Mönch W. J Vac Sci Technol B 17 (1999) 1867
9. Kampen T.U., and Mönch W. Surf Sci 333 (1995) 490
10. Chand S., and Bala S. Phys B 390 (2007) 179
11. Dobrocka E., and Osvald J. Appl Phys Lett 65 (1994) 575
12. Osvald J. Solid-State Electron 50 (2006) 228
13. Okutan M., Basaran E., and Yakuphanoglu F. Appl. Surf. Sci. 252 5 (2005) 1966
14. Song Y.P., Van Meirhaeghe R.L., Laflere W.H., and Cardon F. Solid-State Electron 29 (1986) 633
15. Werner J.H., and Güttler H.H. J Appl Phys 69 (1991) 1522
16. Hamida A.F., Z Ouennoughi, Sellai A., Weiss R., and Ryssel H. Semicond Sci Technol 23 (2008) 045005
17. Mamor M., Sellai A., Bouziane K., Al Harthi S.H., Al Busaidi M., and Gard F.S. J Phys D Appl Phys 40 (2007) 1351
18. Kiziroglou M.E., Zhukov A.A., Lia X., Gonzalez D.C., de Groot P.A.J., Bartlett P.N., et al. Solid State Commun 140 (2006) 508
19. Osvald J., and Horvath Z.J. Appl Surf Sci 234 1-4 (2004) 349-354
20. Lucolano F., Roccaforte F., Giannazzo F., and Raineri V. J Appl Phys 102 (2007) 113701
21. Tung R.T. Phys Rev B 45 (1992) 13509
22. Sullivan J.P., Tung R.T., Pinto M.R., and Graham W.R. J. Appl. Phys. 70 (1991) 7403
23. Chand S., and Kumar J. J Appl Phys 82 (1997) 5005
24. Kim S.W., Lee K.M., Lee J.H., and Seo K.S. IEEE Electron Device Lett 26 11 (2005) 787
25. Cetin H., and Ayyildiz E. Semicond Sci Technol 20 (2005) 625
26. Im H.J., Ding Y., Pelz J.P., and Choyke W.J. Phys Rev B 64 7 (2001) 075310
27. Ayyildiz E., Cetin H., and Horvath Zs.J. Appl Surf Sci 252 (2005) 1153
28. Schmitsdorf R.F., Kampen T.U., and Mönch W. J Vac Sci Technol B 15 (1997) 1221
29. Akkilic K., Aydin M.E., and Turut A. Phys Scrip 70 (2004) 364
30. Leroy W.P., Opsomer K., Forment S., and Van Meirhaeghe R.L. Solid-State Electron 49 (2005) 878
31. Asubay S., Gullu O., and Turut A. Appl Surf Sci 254 11 (2008) 3558
32. Shi ZQ, Anderson WA. Indium phosphide and related materials. In: Third International Conference; 1991. p. 535-538. doi: 10.1109/ICIPRM.1991.147431.
33. Çetin H., and Ayyildiz E. Appl Surf Sci 253 14 (2007) 5961
34. Soylu M., and Abay B. Microelectronic Eng 86 1 (2009) 88
35. Contour J.P., Massies J., and Saletes A. Jpn J Appl Phys 24 7 (1985) L563
36. Duman S., Dogan S., Gurbulak B., and Turut A. Appl Phys A 91 (2008) 337
37. Ivaneo J., Horvath Zs.J., van Tuyen V., Coluzza C., Almeida J., Terrasi A., et al. Solid State Electron 42 (1998) 229
38. Sefaoglu A., Duman S., Dogan S., Gurbulak B., Tuzemen S., and Turut A. Microelectronic Eng 85 3 (2008) 631
39. Ohdomari I., Tu K.N., d'Heurle F.M., Kuan T.S., and Petersson S. Appl Phys Lett 33 (1978) 1028
40. Chin V.W.L., Storey J.W.V., and Gren M.A. Solid-State Electron 32 (1989) 475
41. Werner P., Jager W., and Schuppen A. J Appl Phys 74 (1993) 3846
42. Mönch W. Appl Phys Lett 93 (2008) 172118
43. Akkilic K., Turut A., Cankaya G., and Kilicoglu T. Solid State Commun 125 (2003) 551
44. Akkilic K., Kilicoglu T., and Turut A. Phys B 337 (2003) 388