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Volumn 506, Issue 1, 2010, Pages 388-394

Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au-Sb structure fabricated using SILAR method as a function of temperature

(3) Guzeldir B a Salam, M a Ate, A a

a ATATÜRK UNIVERSITY (Turkey)

Author keywords

Barrier inhomogeneity; Gaussian distribution; Sandwich structure; SILAR method; ZnSe

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; GAUSSIANS; I - V CURVE; IDEALITY FACTORS; IV CHARACTERISTICS; POLYCRYSTALLINE STRUCTURE; REVERSE BIAS; RICHARDSON CONSTANT; RICHARDSON PLOT; SCANNING ELECTRON MICROSCOPES; SEM STUDY; SI SUBSTRATES; SILAR METHOD; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; XRD; ZERO-BIAS; ZNSE; ZNSE THIN FILMS;

ADSORPTION; BIAS VOLTAGE; CARRIER CONCENTRATION; DEPOSITION; GAUSSIAN DISTRIBUTION; SANDWICH STRUCTURES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77956095176 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.07.013 Document Type: Article

Times cited : (33)

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