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Applied Physics A: Materials Science and Processing

Volumn 89, Issue 2, 2007, Pages 503-508

Potential barrier inhomogeneities in irradiated Pd/n-SiGe Schottky diodes

(2) Sellai, A a Mamor, M a

a SULTAN QABOOS UNIVERSITY (Oman)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ELECTRON TUNNELING; ENERGY BARRIERS; GAUSSIAN DISTRIBUTION; ION IMPLANTATION;

BARRIER HEIGHT; MICROELECTRONIC DEVICES; POTENTIAL BARRIER DEFORMATION;

SCHOTTKY BARRIER DIODES;

EID: 34548289885 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-4095-5 Document Type: Article

Times cited : (19)

References (24)

1
- 0006823928
- M. Mamor, H. Ouacha, M. Willander, F.D. Auret, S.A. Goodman, A. Ouacha, E. Sveinbjornsson, Appl. Phys. Lett. 76, 3750 (2000)
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3750
- Mamor, M.¹ Ouacha, H.² Willander, M.³ Auret, F.D.⁴ Goodman, S.A.⁵ Ouacha, A.⁶ Sveinbjornsson, E.⁷

2
- 0025419030
- G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbe, G.J. Scilla, E. de Fresart, J.M.C. Stork, J.Y. C Sun, D.L. Harame, J.N. Burghartz, IEEE Trans. Electron. Dev. Lett. 11, 171 (1990)
- (1990) IEEE Trans. Electron. Dev. Lett. , vol.11 , pp. 171
- Patton, G.L.¹ Comfort, J.H.² Meyerson, B.S.³ Crabbe, E.F.⁴ Scilla, G.J.⁵ De Fresart, E.⁶ Stork, J.M.C.⁷ Sun, J.Y.C.⁸ Harame, D.L.⁹ Burghartz, J.N.¹⁰

3
- 0001530931
- S.S. Rhee, J.S. Park, R.P.G. Karunasiri, Q. Ye, K.L. Wang, Appl. Phys. Lett. 53, 204 (1988)
- (1988) Appl. Phys. Lett. , vol.53 , pp. 204
- Rhee, S.S.¹ Park, J.S.² Karunasiri, R.P.G.³ Ye, Q.⁴ Wang, K.L.⁵

4
- 36449002075
- T.L. Lin, T. George, E.W. Jones, A. Ksendzov, M.L. Huberman, Appl. Phys. Lett. 60, 380 (1992)
- (1992) Appl. Phys. Lett. , vol.60 , pp. 380
- Lin, T.L.¹ George, T.² Jones, E.W.³ Ksendzov, A.⁴ Huberman, M.L.⁵

5
- 84885149819
- N.F. Mott, Proc. Camb. Philos. Soc. 34, 568 (1938)
- (1938) Proc. Camb. Philos. Soc. , vol.34 , pp. 568
- Mott, N.F.¹

6
- 0001766106
- W. Schottky, Phys. Z. 41, 570 (1940)
- (1940) Phys. Z. , vol.41 , pp. 570
- Schottky, W.¹

7
- 36149025707
- J. Bardeen, Phys. Rev. 71, 717 (1947)
- (1947) Phys. Rev. , vol.71 , pp. 717
- Bardeen, J.¹

8
- 3743067479
- V. Heine, Phys. Rev. 138, A1689 (1965)
- (1965) Phys. Rev. , vol.138 , pp. 1689
- Heine, V.¹

9
- 0001066224
- S.G. Louie, M.L. Cohen, Phys. Rev. B 13, 2461 (1976)
- (1976) Phys. Rev. B , vol.13 , pp. 2461
- Louie, S.G.¹ Cohen, M.L.²

10
- 33646611150
- W. Monch, Phys. Rev. B 37, 7129 (1988)
- (1988) Phys. Rev. B , vol.37 , pp. 7129
- Monch, W.¹

11
- 33746806821
- K. Maeda, Appl. Surf. Sci. 252, 5659 (2006)
- (2006) Appl. Surf. Sci. , vol.252 , pp. 5659
- Maeda, K.¹

12
- 0006823928
- M. Mamor, H. Ouacha, M. Willander, F.D. Auret, S.A. Goodman, A. Ouacha, E. Sveinbjornsson, Appl. Phys. Lett. 76, 3750 (2000)
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3750
- Mamor, M.¹ Ouacha, H.² Willander, M.³ Auret, F.D.⁴ Goodman, S.A.⁵ Ouacha, A.⁶ Sveinbjornsson, E.⁷

13
- 0024106331
- .
- J. Werner, Appl. Phys. A 47, 291 (1988).
- (1988) Appl. Phys. A , vol.47 , pp. 291
- Werner, J.¹

14
- 0001650737
- V. Aubry, F. Meyer, J. Appl. Phys. 76, 7973 (1994)
- (1994) J. Appl. Phys. , vol.76 , pp. 7973
- Aubry, V.¹ Meyer, F.²

15
- 0006811348
- M. Mamor, O. Nur, M. Karlsteen, M. Willander, J. Appl. Phys. 86, 6890 (1999)
- (1999) J. Appl. Phys. , vol.86 , pp. 6890
- Mamor, M.¹ Nur, O.² Karlsteen, M.³ Willander, M.⁴

16
- 33947626597
- M. Mamor, A. Sellai, K. Bouziane, S. Al Harthi, M. Bousaidi, F.S. Gard, J. Phys. D Appl. Phys. 40, 1351 (2007)
- (2007) J. Phys. D Appl. Phys. , vol.40 , pp. 1351
- Mamor, M.¹ Sellai, A.² Bouziane, K.³ Al Harthi, S.⁴ Bousaidi, M.⁵ Gard, F.S.⁶

17
- 0003546026
- University Press Oxford
- E. H Rhoderick, R.H. Williams, Metal-Semiconductor Contacts (University Press, Oxford, 1988)
- (1988) Metal-Semiconductor Contacts
- Rhoderick, E.H.¹ Williams, R.H.²

18
- 0004005306
- Wiley and Sons New York
- S.M. Sze, Physics of Semiconductor Devices (Wiley and Sons, New York, 1981)
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

19
- 0023382853
- M.A. Omar, L. Reggiani, Solid State Electron. 30, 693 (1987)
- (1987) Solid State Electron. , vol.30 , pp. 693
- Omar, M.A.¹ Reggiani, L.²

20
- 84916591507
- F.P. Heiman, IEEE Trans. Electron. Dev. 14, 781 (1967)
- (1967) IEEE Trans. Electron. Dev. , vol.14 , pp. 781
- Heiman, F.P.¹

21
- 34548257286
- Q.A. Huang, M. Qin, B. Zhang, J.K.O. Sin, M.C. Poon, IEEE Electron. Dev. Lett. 18, 12 (1997)
- (1997) IEEE Electron. Dev. Lett. , vol.18 , pp. 12
- Huang, Q.A.¹ Qin, M.² Zhang, B.³ Sin, J.K.O.⁴ Poon, M.C.⁵

22
- 0042521197
- H. Palm, M. Arbes, M. Schulz, Phys. Rev. Lett. 71, 2224 (1993)
- (1993) Phys. Rev. Lett. , vol.71 , pp. 2224
- Palm, H.¹ Arbes, M.² Schulz, M.³

23
- 36449000058
- J.H. Werner, H.H. Guttler, J. Appl. Phys. 69, 1522 (1991)
- (1991) J. Appl. Phys. , vol.69 , pp. 1522
- Werner, J.H.¹ Guttler, H.H.²

24
- 32944470330
- A.F. Özdemir, A. Turut, A. Kökçe, Semicond. Sci. Technol. 21, 298 (2006)
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 298
- Özdemir, A.F.¹ Turut, A.² Kökçe, A.³

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