Temperature dependence of current-voltage characteristics of an In/p-GaSe:Gd/Au-Sb Schottky barrier diode

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Duman, Songül ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIRECT ENERGY CONVERSION; HEALTH; OPTICAL DESIGN; PARAMETER ESTIMATION; SEMICONDUCTOR DIODES; STANDARDS; THERMIONIC EMISSION;

BARRIER HEIGHT (BH); CHARACTERISTIC PARAMETERS; CURRENT VOLTAGE; CURRENT VOLTAGE (I V) CHARACTERISTICS; GAUSSIAN; I-V MEASUREMENTS; IDEALITY FACTORS; IN-HOMOGENEITY; RICHARDSON CONSTANT; RICHARDSON PLOT; SCHOTTKY BARRIER (SB); SERIES RESISTANCE (ESR); TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE RANGES;

SCHOTTKY BARRIER DIODES;

EID: 47749109116     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075042     Document Type: Article

References (43)

1. Basinski L S, Dove D B and Mooser E 1961 Helv. Phys. Acta 34 373
2. Thamilselvan M, Premnazeer K, Mangalaraj D, Narayandass Sa K and Junsin Yi 2004 Cryst. Res. Technol. 39 137
3. Singh N B, Narayanan R, Zhao A X, Balakrishna V, Hopkins R H, Suhre D R, Fernelius N C, Hopkins F K and Zelmon D E 1997 Mater. Sci. Eng. B 49 243
4. Ho C H, Hsieh M H and Wu C C 2006 Rev. Sci. Instrum. 77 113102
5. Adduci F A, Ferrara M, Tantalo P, Cingolani A and Minafra A 1973 Phys. Status Solidi a 15 303
6. Kyazymzade A G, Mekhtieva R N and Akhmedov A A 1991 Sov. Phys. Semicond. 25 840
7. Fernelius N C 1994 Prog. Cryst. Growth Charact. 28 275
8. Manfredotti C, Murri R, Quirini A and Vasanelli L 1975 Nucl. Instrum. Methods 131 457
9. Sakai E, Nakatani H, Tatsuyama C and Takeda F 1988 IEEE Trans. Nucl. Sci. 35 85
10. Mekhtiev N M, Rud Y V and Salaev E Y 1978 Sov. Phys. Semicond. 12 924
11. Tugluoglu N, Karadeniz S, Sahin M and Safak H 2004 Appl. Surf. Sci. 233 320
12. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts 2nd edn (Oxford: Clarendon)
13. Huang W C, Su S S, Hsu Y K, Wang C C and Chang C S 2006 Superlattices Microstruct. 40 644
14. Rhoderick E H 1980 Metal-Semiconductor Contacts (Oxford: Clarendon)
15. Aboelfotoh M O 1989 J. Appl. Phys. 66 262
16. Benmaza H, Akkal B, Abid H, Bluet J M, Anani M and Bensaad Z 2008 Microelectron. J. 39 80
17. Gumus A, Turut A and Yalcin N 2002 J. Appl. Phys. 91 245
18. Tung R T 2001 Mater. Sci. Eng. R 35 1
19. Dobrocka E and Osvald J 1994 Appl. Phys. Lett. 65 575
20. Lonergan M C and Jones F E 2001 J. Chem. Phys. 115 433
21. Von Wenckstern H, Biehne G, Rahman R A, Hochmuth H, Lorenz M and Grundmann M 2006 Appl. Phys. Lett. 88 092102
22. Horvath Z J 1996 Solid-State Electron. 39 176
23. Werner J H and Guttler H H 1991 J. Appl. Phys. 69 1522
24. Sullivan J, Tung R T, Pinto M and Graham W R 1991 J. Appl. Phys. 70 7403
25. Norde H 1979 J. Appl. Phys. 50 5052
26. Abay B, Cankaya G, Guder H S, Efeoglu H and Yogurtcu Y K 2003 Semicond. Sci. Technol. 18 75
27. Karatas S, Altindal S, Turut A and Ozmen A 2003 Appl. Surf. Sci. 217 250
28. Duman S, Gurbulak B and Turut A 2007 Appl. Surf. Sci. 253 3899
29. Aydogan S, Saglam M and Turut A 2005 Appl. Surf. Sci. 250 43
30. Vanalme G M, Van Meirhaeghe R L, Cardon F and van Daele P 1997 Semicond. Sci. Technol. 12 907
31. Iucolano F, Roccaforte F, Giannazzo F and Raineri V 2007 J. Appl. Phys. 102 113701
32. Chand S and Kumar J 1996 J. Appl. Phys. 80 288
33. Song Y P, Van Meirhaeghe R L, Laflére W H and Cardon F 1986 Solid-State Electron. 29 633
34. Chand S and Kumar J 1995 Semicond. Sci. Technol. 10 1680
35. Chand S and Bala S 2005 Appl. Surf. Sci. 252 358
36. Osvald J and Horvath Z J 2004 Appl. Surf. Sci. 234 349
37. Dimitriadis C A, Logothetidis S and Alexandrou I 1995 Appl. Phys. Lett. 66 502
38. Calcagno L, Ruggiero A, Roccaforte F and La Via F 2005 J. Appl. Phys. 98 023713
39. Padovani F A and Summer G 1965 Appl. Phys. A 36 3744
40. Gao W, Berger P R, Hunsperger R G, Zydzik G, Rhodes W W, O'Bryan H M, Sivco D and Cho A Y 1995 Appl. Phys. Lett. 66 3471
41. Roccaforte F, La Via F, Raineri V, Mangano F and Calcagno L 2003 Appl. Phys. Lett. 83 4181
42. Sato K and Yasumura Y 1985 J. Appl. Phys. 58 3655
43. Gurbulak B, Yildirim M, Tuzemen S, Efeoglu H and Yogurtcu Y K 1998 J. Appl. Phys. 83 2030