Effect of ion irradiation on current-voltage characteristics of Au/n-GaN Schottky diodes

Journal of Alloys and Compounds

Volumn 480, Issue 2, 2009, Pages 962-965

  Baranwal, V ^a,b   Kumar, S ^c   Pandey, A C ^b   Kanjilal, D ^c  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF ALLAHABAD   (India)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Gallium nitride; I V characteristics; Ion irradiation; Schottky diode

Indexed keywords

CURRENT-VOLTAGE CHARACTERIZATION; ENERGY LOSS MECHANISMS; FLUENCE; I-V CHARACTERISTICS; IN-SITU; ION IRRADIATION; METAL SEMICONDUCTOR INTERFACE; ON CURRENTS; SCHOTTKY; SCHOTTKY DIODE; SCHOTTKY DIODES; SWIFT HEAVY IONS;

DIODES; ENERGY DISSIPATION; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; IRRADIATION; RADIATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67349198162     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.02.094     Document Type: Article

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