Characterization of plasma etching induced interface states at Tip-SiGe Schottky contacts

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 705-709

  Mamor, M ^a   Sellai, A ^a  

^a SULTAN QABOOS UNIVERSITY   (Oman)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEPTH PROFILING; ETCHING; INERT GASES; PLASMA ETCHING; PLASMAS; SPUTTERING;

(1 1 0) SURFACE; (P ,P ,T) MEASUREMENTS; ARGON PLASMAS; BARRIER HEIGHT (BH); BIAS DEPENDENCE; CURRENT VOLTAGE; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DEFECT CONCENTRATIONS; ELECTRICAL CHARACTERISTICS; FORWARD BIAS; INTERFACE STATE DENSITIES; INTERFACE STATES; INTERFACE STATES DENSITY; SCHOTTKY CONTACTS; SPUTTER ETCHING; SURFACE STATES; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENT; WIDE TEMPERATURE RANGE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 46449110808     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2913576     Document Type: Article

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