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Journal of Alloys and Compounds

Volumn 507, Issue 2, 2010, Pages 508-512

Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction

(3) Chung, G S a Kim, K S a Yakuphanoglu, F b

a University of Ulsan (South Korea)

b FIRAT UNIVERSITY (Turkey)

Author keywords

3C SiC diode; Interfacial state density; Schottky diode

Indexed keywords

ACTIVATED PROCESS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BARRIER HEIGHTS; CHARGE TRANSPORT MECHANISMS; CONDUCTANCE-FREQUENCY; ELECTRICAL CHARACTERIZATION; ELECTRICAL PARAMETER; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; HIGH TEMPERATURE; IDEAL BEHAVIOR; IDEALITY FACTORS; INHOMOGENEITIES; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACIAL STATE DENSITY; METAL/SEMICONDUCTOR INTERFACE; POLY 3C-SIC; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; SERIES RESISTANCES; SI(1 0 0); SIC DIODES; SILICON CARBIDE SCHOTTKY DIODES; TEMPERATURE RANGE; THERMIONIC EMISSION THEORY;

ATMOSPHERIC PRESSURE; ATMOSPHERIC TEMPERATURE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIODES; GOLD; GOLD COATINGS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMIONIC EMISSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957168875 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.08.004 Document Type: Article

Times cited : (41)

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