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EPJ Applied Physics

Volumn 45, Issue 1, 2009, Pages

Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes

(3) Yildirim, N a Korkut, H a Turut A a

a ATATÜRK UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM ALLOYS; GAUSSIAN DISTRIBUTION; SEMICONDUCTING GALLIUM; THERMIONIC EMISSION; TRELLIS CODES;

BARRIER HEIGHTS; BARRIER INHOMOGENEITY; DC SPUTTERING; EMISSION MODELS; GAAS; GAUSSIAN DISTRIBUTION MODELS; I-V CHARACTERISTICS; IDEALITY FACTORS; INHOMOGENEITIES; INHOMOGENEITY; RICHARDSON CONSTANTS; RICHARDSON PLOTS; SAMPLE TEMPERATURES; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES;

SCHOTTKY BARRIER DIODES;

EID: 59049103889 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap:2008191 Document Type: Article

Times cited : (26)

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