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Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts

(3) Yldrm, Nezir a Ejderha, Kadir a Turut, Abdulmecit b

a BINGOL UNIVERSITY (Turkey)

b ATATÜRK UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; HIGH POWER ELECTRONICS; I-V AND C-V CHARACTERISTICS; MOBILE CHARGE; RICHARDSON CONSTANT; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; WIDE-BAND-GAP SEMICONDUCTOR;

ACTIVATION ENERGY; CARRIER CONCENTRATION; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78751514693 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517810 Document Type: Article

Times cited : (109)

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