Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructures

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Lu, Changzhi ^a   Mohammad, S Noor ^b,c,d  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b Howard University   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PIEZOELECTRIC POLARIZATION; SCHOTTKY-MOTT RULES; SEMICONDUCTOR HETEROSTRUCTURES;

GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS;

SCHOTTKY BARRIER DIODES;

EID: 33750147984     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358956     Document Type: Article

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