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Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4)2Sx treated n -type GaN

(10) Lin, F a Shen, B a Huang, S a Xu, F J a Lu, L a Song, J a Mei, F H a Ma, N a Qin, Z X a Zhang, G Y a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; MEASURING TEMPERATURE; METAL/SEMICONDUCTOR INTERFACE; PINCHOFF; SCHOTTKY BARRIER HEIGHTS; SPECIFIC CONTACT RESISTANCES; SPECIFIC CONTACT RESISTIVITY; SPECIFIC RESISTANCES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TI/AL/NI/AU; TRANSMISSION LINE TECHNIQUE;

FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 67249132442 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3120962 Document Type: Article

Times cited : (16)

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