The behavior of the I-V-T characteristics of inhomogeneous (NiAu) - Al 0.3Ga0.7 NAlNGaN heterostructures at high temperatures

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Tekeli, Z ^a   Altndal, S ^a   Cakmak M ^a   Ozcelik S ^a   Caliskan D ^b   Ozbay E ^b  

^a GAZI UNIVERSITY   (Turkey)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GAUSSIAN DISTRIBUTION; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMIONIC EMISSION;

FINITE SERIES RESISTANCE; METALSEMICONDUCTOR INTERFACES; TEMPERATURE COEFFICIENTS;

HETEROJUNCTIONS;

EID: 34548647693     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2777881     Document Type: Article

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