A theoretical analysis together with experimental data of inhomogeneous Schottky barrier diodes

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2270-2274

  Yildirim, Nezir ^a   Türüt, Abdulmecit ^b  

^a BINGOL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneities; Current voltage characteristics; GaAs; Gaussian distribution; Metal semiconductor contacts; Numerical simulation; Schottky diodes

Indexed keywords

BARRIER INHOMOGENEITIES; GAAS; METAL SEMICONDUCTOR CONTACTS; NUMERICAL SIMULATION; SCHOTTKY DIODES;

COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; DIFFUSERS (OPTICAL); ELECTRIC POTENTIAL; GALLIUM ALLOYS; GAUSSIAN DISTRIBUTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69549126166     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.04.003     Document Type: Article

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