AlGaN/GaN two-dimensional electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layers

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

  Chang, P C ^a   Lee, K H ^b   Chang, S J ^b   Su, Y K ^a   Liu, C H ^c  

^a KUN SHAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CRYSTAL QUALITIES; CURRENT VOLTAGE CURVE; GAN LAYERS; HETEROSTRUCTURES; HIGH TEMPERATURE; HIGH-VOLTAGE OPERATION; IDEALITY FACTORS; INTERFACE STATE; METALORGANIC CHEMICAL VAPOR DEPOSITION; RECTIFYING PROPERTIES; REVERSE LEAKAGE CURRENT; SCAN IMAGES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY-BARRIER PHOTODIODE; SURFACE PITS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ATOMIC FORCE MICROSCOPY; DISTILLATION; ELECTRON GAS; ELECTRONS; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SMELTING; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 70350645180     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/10/105005     Document Type: Article

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