Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 573-580

  Arulkumaran, S ^a   Egawa, T ^a   Ishikawa, H ^a   Umeno, M ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM; AlGaN; Annealing; Schottky diode

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS;

CAPACITANCE-VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE MEASUREMENTS;

SCHOTTKY BARRIER DIODES;

EID: 0035278833     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906453     Document Type: Article

References (20)

1. Thermally stable rhenium Schottky contacts to n-GaN
2. Thermally stable PtSi Schottky contact on n-GaN
3. Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
4. Schottky diodes on MOCVD grown AlGaN films
5. 1-xN
6. Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
7. 0.89N
8. High temperature characteristics of Pd Schottky contacts on n-type GaN
9. Effects of annealing on Ti Schottky barriers on n-type GaN
10. Schottky contact and the thermal stability of Ni on n-type GaN
11. Investigations on strained AlGaN/GaN/Sapphire and GaInN multi-quantum well surface LED's using AlGaN/GaN Bragg reflectors
12. Thermal stability of Pd/AlGaN Schottky diodes
13. Growth and application of group III-nitrides
14. Metal contacts to n-type GaN
15. A review of the metal-GaN contact technology
16. Ni and Ni silicide Schottky contacts on n-GaN
17. Agglomeration of thin platinum films on a zirconia substrate
18. High temperature behavior of Pt and Pd on GaN
19. Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
20. Thermal stability of Pd/AlGaN Schottky diodes