SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 181-187

Temperature dependence of GaN Schottky diodes I-V characteristics

(5) Osvald, J a Kuzmik, J a,b Konstantinidis, G c Lobotka, P a Georgakilas, A c

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

Author keywords

GaN; Schottky diodes

Indexed keywords

CRYSTALS; LIGHT POLARIZATION; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; TEMPERATURE MEASUREMENT; THERMIONIC EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY DIODES; SURFACE POLARIZATION CHARGE; THERMIONIC TRANSPORT MECHANISM; TRANSPORT TUNNELING;

GALLIUM NITRIDE;

EID: 23444452579 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.03.004 Document Type: Conference Paper

Times cited : (52)

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