Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

Synthetic Metals

Volumn 158, Issue 21-24, 2008, Pages 821-825

  Yakuphanoglu, Fahrettin ^a   Şenkal, B Filiz ^b  

^a FIRAT UNIVERSITY   (Turkey)

^b ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Diode; Organic layer; Photovoltaic properties

Indexed keywords

BORON; BORON COMPOUNDS; DIODES; OPEN CIRCUIT VOLTAGE; POLYANILINE; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; TRANSPORT PROPERTIES; ULTRAVIOLET RADIATION;

BARRIER HEIGHTS; CHARGE TRANSPORT PROPERTIES; ELECTRICAL CHARACTERIZATIONS; ELECTRONIC PARAMETERS; IDEALITY FACTORS; OPEN CIRCUITS; OPTICAL APPLICATIONS; OPTICAL-; ORGANIC LAYER; PHOTOVOLTAIC PROPERTIES; SENSOR APPLICATIONS; SERIES RESISTANCES; SILICON DEVICES; SILICON DIODES; SILICON STRUCTURES; ULTRAVIOLET LIGHTS; UV ILLUMINATIONS; UV LIGHTS; VOLTAGE CHARACTERISTICS; WHITE LIGHTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 57649231842     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2008.05.011     Document Type: Article

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