-
1
-
-
34249874568
-
-
APPLAB 0003-6951 10.1063/1.2743744.
-
A. Gadanecz, J. Bläsing, A. Dadgar, C. Hums, and A. Krost, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2743744 90, 221906 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 221906
-
-
Gadanecz, A.1
Bläsing, J.2
Dadgar, A.3
Hums, C.4
Krost, A.5
-
2
-
-
33244495723
-
-
IETDAI 0018-9383 10.1109/TED.2005.864379.
-
J. Kuzmik, A. Kostopoulos, G. Konstantinidis, J. -F. Carlin, A. Georgakilas, and D. Pogany, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2005.864379 53, 422 (2006).
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, pp. 422
-
-
Kuzmik, J.1
Kostopoulos, A.2
Konstantinidis, G.3
Carlin, J.-F.4
Georgakilas, A.5
Pogany, D.6
-
3
-
-
33846250374
-
-
APPLAB 0003-6951 10.1063/1.2424649.
-
C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2424649 90, 022105 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 022105
-
-
Hums, C.1
Bläsing, J.2
Dadgar, A.3
Diez, A.4
Hempel, T.5
Christen, J.6
Krost, A.7
Lorenz, K.8
Alves, E.9
-
4
-
-
0035911397
-
-
APPLAB 0003-6951 10.1063/1.1356450.
-
J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1356450 78, 1685 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 1685
-
-
Hsu, J.W.P.1
Manfra, M.J.2
Lang, D.V.3
Richter, S.4
Chu, S.N.G.5
Sergent, A.M.6
Kleiman, R.N.7
Pfeiffer, L.N.8
Molnar, R.J.9
-
5
-
-
1242332768
-
-
APPLAB 0003-6951,. 10.1063/1.1638878
-
O. Mitrofanov and M. Manfra, Appl. Phys. Lett. APPLAB 0003-6951 84, 422 (2004). 10.1063/1.1638878
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 422
-
-
Mitrofanov, O.1
Manfra, M.2
-
6
-
-
36148952962
-
-
EDLEDZ 0741-3106 10.1109/LED.2007.906932.
-
C. Xu, J. Wang, H. Chen, F. Xu, Z. Dong, Y. Hao, and C. P. Wen, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2007.906932 28, 942 (2007).
-
(2007)
IEEE Electron Device Lett.
, vol.28
, pp. 942
-
-
Xu, C.1
Wang, J.2
Chen, H.3
Xu, F.4
Dong, Z.5
Hao, Y.6
Wen, C.P.7
-
7
-
-
31644446727
-
-
JAPIAU 0021-8979 10.1063/1.2159547.
-
H. Zhang, E. J. Miller, and E. T. Yu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2159547 99, 023703 (2006).
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 023703
-
-
Zhang, H.1
Miller, E.J.2
Yu, E.T.3
-
8
-
-
0037097915
-
-
JAPIAU 0021-8979 10.1063/1.1478793.
-
E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1478793 91, 9821 (2002).
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 9821
-
-
Miller, E.J.1
Schaadt, D.M.2
Yu, E.T.3
Poblenz, C.4
Elsass, C.5
Speck, J.S.6
-
9
-
-
56349117212
-
-
JAPIAU 0021-8979 10.1063/1.3006133.
-
F. Iucolano, F. Roccaforte, F. Giannazzo, and V. Raineri, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3006133 104, 093706 (2008).
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 093706
-
-
Iucolano, F.1
Roccaforte, F.2
Giannazzo, F.3
Raineri, V.4
-
10
-
-
37149029094
-
-
JAPIAU 0021-8979 10.1063/1.2817647.
-
F. Iucolano, F. Roccaforte, F. Giannazzo, and V. Raineri, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2817647 102, 113701 (2007).
-
(2007)
J. Appl. Phys.
, vol.102
, pp. 113701
-
-
Iucolano, F.1
Roccaforte, F.2
Giannazzo, F.3
Raineri, V.4
-
11
-
-
34249822479
-
-
EDLEDZ 0741-3106 10.1109/LED.2007.896904.
-
J. -Y. Shiu, J. -C. Huang, V. Desmaris, C. -T. Chang, C. -Y. Lu, K. Kumakura, T. Makimoto, H. Zirath, N. Rorsman, and E. Y. Chang, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2007.896904 28, 476 (2007).
-
(2007)
IEEE Electron Device Lett.
, vol.28
, pp. 476
-
-
Shiu, J.-Y.1
Huang, J.-C.2
Desmaris, V.3
Chang, C.-T.4
Lu, C.-Y.5
Kumakura, K.6
Makimoto, T.7
Zirath, H.8
Rorsman, N.9
Chang, E.Y.10
-
12
-
-
59349101001
-
-
JAPIAU 0021-8979 10.1063/1.3068202.
-
E. Arslan,. Altndal, S. Öz̧elik, and E. Ozbay, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3068202 105, 023705 (2009).
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 023705
-
-
Arslan, E.1
Altndal, .2
Öz̧elik, S.3
Ozbay, E.4
-
13
-
-
34547457632
-
-
APPLAB 0003-6951 10.1063/1.2763956.
-
G. Pozzovivo, J. Kuzmik, S. Golka, W. Schrenk, G. Strasser, D. Pogany, K. Čičo, M. apajna, K. Fröhlich, J. -F. Carlin, M. Gonschorek, E. Feltin, and N. Grandjean, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2763956 91, 043509 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 043509
-
-
Pozzovivo, G.1
Kuzmik, J.2
Golka, S.3
Schrenk, W.4
Strasser, G.5
Pogany, D.6
Čičo, K.7
Apajna, M.8
Fröhlich, K.9
Carlin, J.-F.10
Gonschorek, M.11
Feltin, E.12
Grandjean, N.13
-
14
-
-
26344462977
-
-
PHRVAO 0031-899X 10.1103/PhysRev.54.647.
-
J. Frenkel, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.54.647 54, 647 (1938).
-
(1938)
Phys. Rev.
, vol.54
, pp. 647
-
-
Frenkel, J.1
-
15
-
-
0037236227
-
-
SSTEET 0268-1242 10.1088/0268-1242/18/1/302.
-
M. M. Abdul-Gader Jafar, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/18/1/302 18, 7 (2003).
-
(2003)
Semicond. Sci. Technol.
, vol.18
, pp. 7
-
-
Abdul-Gader Jafar, M.M.1
-
17
-
-
64349108292
-
-
(INSPEC, The Institution of Electrical Engineers, London).
-
J. H. Edgar, S. Stritei, I. Akasaki, H. Amano, and C. Wetzel, GaN and Related Semiconductors (INSPEC, The Institution of Electrical Engineers, London, 1999).
-
(1999)
GaN and Related Semiconductors
-
-
Edgar, J.H.1
Stritei, S.2
Akasaki, I.3
Amano, H.4
Wetzel, C.5
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