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Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

Temperature dependence of current-voltage characteristics in highly doped Ag/ p -GaN/In Schottky diodes

(4) Nar, K a Yldrm, N b Cokun, C a Turut, A a

a ATATÜRK UNIVERSITY (Turkey)

b BINGOL UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT MECHANISMS; CONDUCTION PROCESS; DEEP-LEVEL DEFECTS; DEFECT STATE; EXPERIMENTAL CHARACTERISTICS; FE MODEL; FORWARD BIAS; IV CHARACTERISTICS; LINEAR PORTIONS; REVERSE BIAS; SATURATION CURRENT; SCHOTTKY DIODES; SEMI-CONDUCTOR SURFACES; STATE DENSITIES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE RANGE; THEORETICAL VALUES; THERMIONIC FIELD EMISSION; TUNNELING ENERGY;

DEFECT DENSITY; DIFFUSERS (OPTICAL); DOPING (ADDITIVES); ELECTRIC FIELDS; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION; TUNNELING (EXCAVATION); WIND TUNNELS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70350106745 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236647 Document Type: Article

Times cited : (45)

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