Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4415-4418

  Diale, M ^a   Auret, F D ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Schottky contact; Surface treatment

Indexed keywords

BARRIER HEIGHTS; CHEMICAL TREATMENTS; CLEANING METHODS; DIODE PARAMETERS; HIGH SERIES RESISTANCES; IDEALITY FACTORS; IV CHARACTERISTICS; MEAN VALUES; METAL DEPOSITION; REVERSE BIAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; STATISTICAL ANALYSIS;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SURFACE TREATMENT;

SCHOTTKY BARRIER DIODES;

EID: 71749121189     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.039     Document Type: Article

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