Analysis of the current-voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature range

Semiconductor Science and Technology

Volumn 24, Issue 3, 2009, Pages

  Ravinandan, M ^a   Rao, P Koteswara ^b   Rajagopal Reddy, V ^b  

^a UNIVERSITY OF MYSORE   (India)

^b SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; ELECTRICAL CHARACTERISTICS; FLAT BANDS; IDEALITY FACTORS; LINEAR RELATIONSHIPS; RICHARDSON CONSTANTS; SCHOTTKY DIODES; SCHOTTKY STRUCTURES; SERIES RESISTANCES; TEMPERATURE CO-EFFICIENT; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; TEMPERATURE-DEPENDENT I-V CHARACTERISTICS; THEORETICAL VALUES; ZERO BIAS;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; GAUSSIAN DISTRIBUTION; SEMICONDUCTING GALLIUM; THERMIONIC EMISSION; TRELLIS CODES;

SCHOTTKY BARRIER DIODES;

EID: 64249107062     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/3/035004     Document Type: Article

References (36)

1. Moon J S, Micovic M, Kudoghlian A, Janke P, Hashimoto P, Wong W S, McCray L and Nguyen C 2002 IEEE Electron. Device Lett. 23 637
2. Mistele D 2002 Mater. Sci. Eng. B 93 107
3. Flannery L B, Harrison I, Lacklison D E, Dykeman R I, Cheng T S and Foxon C T 1997 Mater. Sci. Eng. B 50 307
4. Chen L C, Hsu C Y, Lan W H and Teng S Y 2003 Solid-State Electron. 47 1843
5. Werner R, Reinhardt M, Emmerling M, Forchel A, Harle V and Bazhenov A 2000 Physica E 7 915
6. Yu L S, Liu Q Z, Xing Q J, Qiao D J and Lau S S 1998 J. Appl. Phys. 84 2099
7. Osvald J, Kuzmik J, Konstantinidis G, Lobotka P and Georgakilas A 2005 Microelectron. Eng. 81 181
8. Arehart A R, Moran B, Speck J S, Mishra U K, Den Baars S P and Ringel S A 2006 J. Appl. Phys. 100 023709
9. Ping A T, Schmitz A C, Asif Khan M and Adesida I 1996 Electron. Lett. 32 68
10. Akkal B, Benamara Z, Abid H, Talbi A and Gruzza B 2004 Mater. Chem. Phys. 85 27
11. Zhou Y, Wang D, Ahyi C, Tin C C, Williams J, Park M, Mark Williams N, Hanser A and Preble Edward A 2007 J. Appl. Phys. 101 024506
12. Chand S 2004 Semicond. Sci. Technol. 19 82
13. Osvald 2006 J. Solid-State Electron. 50 228
14. Rhoderick E H and Williams T H 1988 Metal Semiconductor Contacts (Oxford: Clarendan)
15. Drechsler M, Hofman D M, Meyer B K, Detchprohm T, Amano H and Akasaki I 1995 Japan J. Appl. Phys. 34 L1178
16. Chand S and Kumar J 1996 J. Appl. Phys. 80 288
17. Zhu S, Van Meirhaeghe R L, Detavernier C, Cardon F, Ru G P, Qu X P and Li B Z 2000 Solid-State Electron. 44 663
18. Karadeniz S, Sahin M, Tugluoglu N and Safak H 2004 Semicond. Sci. Technol. 19 1098
19. Sullivan J P, Tung R T, Pinto M R and Graham W R 1991 J. Appl. Phys. 70 7403
20. Tung R T 1992 Phys. Rev. B 45 13509
21. Schmitsdorf R F, Kampen T U and Monch W 1995 Surf. Sci. 324 249
22. Cheung S K and Cheung N W 1986 Appl. Phys. Lett. 49 85
23. Cibils R M and Buitrago R H 1986 J. Appl. Phys. 581 1075
24. Norde H 1979 J. Appl. Phys. 50 5052
25. Bohlin K E 1986 J. Appl. Phys. 60 1223
26. Sato K and Yasumura Y 1985 J. Appl. Phys. 58 3655
27. Lee T C, Fung S, Beling C D and Au H L 1992 J. Appl. Phys. 72 4739
28. Kribes Y, Harrisson I, Tuck B, Cheng T S and Foxon C T 1997 Semicond. Sci. Technol. 12 913
29. Wagner L F, Young R W and Sugerman S 1983 IEEE Electron Device Lett. 4 320
30. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
31. Singh A 1993 Solid-State Electron. 28 223
32. McCafferty P G, Sellai A, Dawson P and Elabd H 1996 Solid-State Electron. 39 583
33. Lee S-Y, Jang C-O, Hyung J-H, Kim T-H and Lee S-K 2008 Physica E 40 3092
34. Forment S, Van Meirhaeghe R L, De Vrieze A, Strubbe K and Gomes W P 2001 Semicond. Sci. Technol. 16 975
35. Calvet L E, Wheeler R G and Reed M A 2002 Appl. Phys. Lett. 80 1761
36. Karatas S, Altindal S, Turut A and Ozmen A 2003 Appl. Surf. Sci. 217 250