Temperature dependence on current-voltage characteristics of Ni/Au- Al 0.45Ga0.55N Schottky photodiode

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Cheng, C J ^a   Zhang, X F ^a   Lu, Z X ^a   Ding, J X ^a   Zhang, L ^a   Zhao, L ^a   Si, J J ^a   Sun, W G ^a   Sang, L W ^b   Qin, Z X ^b   Zhang, G Y ^b  

^a Luoyang Optoelectronic Institute   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PHOTODIODES; THERMAL EFFECTS; THERMIONIC EMISSION; THERMOELECTRICITY;

SCHOTTKY PHOTODIODES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMIONIC FIELD EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 40849147373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2896298     Document Type: Article

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