Low-temperature sputtered mixtures of high-κ and high bandgap dielectrics for GIZO TFTs

Journal of the Society for Information Display

Volumn 18, Issue 10, 2010, Pages 762-772

  Barquinha, Pedro ^a   Pereira, Luis ^a   Gonçalves, Gonçalo ^a   Kuscer, Danjela ^b   Kosec, Marija ^b   Vilà, Anna ^c   Olziersky, Antonis ^c   Morante, Juan Ramon ^c,d   Martins, Rodrigo ^a   Fortunato, Elvira ^a  

^a DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

^b JO EF STEFAN INSTITUTE   (Slovenia)

^c UNIVERSITY OF BARCELONA   (Spain)

^d CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

Author keywords

Hafnium oxide; Multicomponent dielectric; Oxide TFT; Sputtering; Tantalum oxide

Indexed keywords

AMORPHOUS DIELECTRICS; AMORPHOUS STRUCTURES; BAND GAPS; BANDGAP MATERIALS; CONSTANT CURRENT; DEVICE PERFORMANCE; DIELECTRIC LAYER; DIELECTRIC/SEMICONDUCTOR INTERFACE; FIELD-EFFECT MOBILITIES; HIGH BANDGAP; LOW TEMPERATURES; MULTICOMPONENT MATERIALS; MULTICOMPONENTS; ON/OFF RATIO; POLYCRYSTALLINE STRUCTURE; PROCESSING TEMPERATURE; ROUGH SURFACES; SMOOTH SURFACE; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE SHIFTS; TURN ON VOLTAGE;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; ENERGY GAP; HAFNIUM; HAFNIUM OXIDES; OXIDES; PROCESSING; SILICON COMPOUNDS; SURFACE STRUCTURE; TANTALUM; THRESHOLD VOLTAGE;

TANTALUM OXIDES;

EID: 77958198978     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.10.762     Document Type: Article

References (55)

1. R. L. Hoffman, "Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors," Solid-State Electron. 50, 784-787 (2006).
2. 3P. Gorrn et al., "Towards see-through displays: Fully transparent thin- film transistors driving transparent organic light-emitting diodes," Adv. Mater 18, 738-741 (2006).
3. N. L. Dehuff et al., "Transparent thin-film transistors with zinc indium oxide channel layer," J. Appl. Phys. 97, 064505-1-064505-5 (2005).
4. B. Yaglioglu et al., "High-mobility amorphous In2O3-10 wt.% ZnO thin film transistors," Appl. Phys. Lett. 89, 062103-1-062103-3 (2006).
5. E. Fortunato et al., "High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors," Solid-State Electron. 52, 443-448 (2008).
6. 2/V-sec," Phys. Status Solidi-Rapid Res. Lett. 1, R34-R36 (2007).
7. H.Q. Chiang et al., "Thin-film transistors with amorphous indium gallium oxide channel layers," J. Vac. Sci. Technol. B 24, 2702-2705 (2006).
8. G. Goncalves, "High mobility a-IGO films produced at room temperature and their application in TFTs," Electrochem. Solid State Lett. 13, II20-II22 (2010).
9. E. M. C. Fortunato et al., "High mobility indium free amorphous oxide thin film transistors," Appl. Phys. Lett. 92, 222103-1-222103-3 (2008).
10. H. Hosono et al., "Factors controlling electron transport properties in transparent amorphous oxide semiconductors," J. Non-Cryst. Solids 354, 2796-2800 (2008).
11. J. S. Park et al., "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett. 90, 262106-1-262106-3 (2007).
12. P. Barquinha et al., "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).
13. R. E. Presley et al., "Transparent ring oscillator based on indium gallium oxide thin-film transistors," Solid-State Electron. 50, 500-503 (2006).
14. D. C. Paine et al., "Amorphous IZO-based transparent thin film transistors," Thin Solid Films 516, 5894-5898 (2008).
15. M. Kim et al., "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett. 90, 212114-1-212114-3 (2007).
16. J. H. Jeong et al., "Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors," Electrochem. Solid-State Lett. 11, H157-H159 (2008).
17. P. F. Carcia et al., "A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics," J. Appl. Phys. 102, 074512-1-074512-7 (2007).
18. W. Lim et al., "Stable room temperature deposited amorphous In- GaZnO4 thin film transistors," J. Vac. Sci. Technol. B 26, 959-962 (2008) .
19. L. Wang et al., "High-performance transparent inorganic-organic hybrid thin-film n-type transistors," Nat. Mater. 5, 893-900 (2006).
20. S. H. Noh et al., "ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators," Appl. Phys. Lett. 90, 253504-1-253504-3 (2007).
21. J. I. Song et al., "Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature," Appl. Phys. Lett. 90, 022106-1-022106-3 (2007).
22. W. Lim et al., "High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering," J. Electrochem. Soc. 155, H383-H385 (2008).
23. Q. J. Yao and D. J. Li, "Fabrication and property study of thin film transistor using rfsputtered ZnO as channel layer," J. Non-Cryst. Solids 351, 3191-3194 (2005).
24. J. F. Wager et al., Transparent Electronics (Springer, New York, 2008).
25. G. D. Wilk et al., "High-kappa gate dielectrics: Current status and materials properties considerations," J. Appl. Phys. 89, 5243-5275 (2001).
26. J. Robertson, "Electronic structure and band offsets of high-dielectricconstant gate oxides," MRS Bull. 27, 217-221 (2002). (Pubitemid 34271856)
27. M. R. Visokay et al., "Application of HfSiON as a gate dielectric material," Appl. Phys. Lett. 80, 3183-3185 (2002).
28. P. H. Tsai et al., "Stability enhancement of LTPS TFTs using dual-layer SiO2/SiNx gate dielectrics," in IDMC '0.5: Proceedings of the International Display Manufacturing Conference 2005, edited by H. P. D. Shieh and F. C. Chen, Taipei: Society Information Display Taipei Chapter, 487-489 (2005).
29. K. M. Chang et al., "Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma," IEEE Trans. Electron. Dev. 51 , 63-67 (2004).
30. X. Zou et al., "Improved electrical characteristics and reliability of amorphous InGaZnO metal-insulator-semiconductor capacitor with high [kappa] HfOxNy gate dielectric," Microelectron. Reliability 50, 954-958 (2010).
31. X. Zou et al., "A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics," Semicond. Sci. Technol. 25, 055006-1-055006-5 (2010).
32. J. B. Kim et al., "High-performance InGaZnO thin-film transistors with high-κ amorphous Ba0 5Sr0 5TiO3 gate insulator," Appl. Phys. Lett. 93, 242111-1-242111-3 (2008).
33. D. H. Kim et al., "Low voltage operating InGaZnO4 thin film transistors using high-κ MgO-Ba0 6Sr0 4TiO3 composite gate dielectric on plastic substrate," Appl. Phys. Lett. 93, 032901-1-032901-3 (2008).
34. N. C. Su et al., "High-performance InGaZnO thin-film transistors using HfLaO gate dielectric," IEEE Electron. Dev. Lett. 30, 1317-1319 (2009).
35. S. Chang et al., "Efficient suppression ofcharge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure," Appl. Phys. Lett. 92, 192104-1-192104-3 (2008).
36. S. Y. Lee et al., "Role of high-κ gate insulators for oxide thin film transistors," Thin Solid Films 518, 3030-3032 (2010).
37. M. H. Lim et al., "Low-leakage current-stacked MgO/Bi1 5Zn0 1Nb1 5O0 5 gate insulator - for low voltage ZnO thin film transistors," Appl. Phys. Lett. 89, 202908-1-202908-3 (2006).
38. A. Suresh et al., "Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett. 90, 123512-1-123512-3 (2007).
39. Y.-J. Cho et al., "Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors," Thin Solid Films 517, 4115-4118 (2009).
40. I. T. Cho et al., "Comparative study of the low-frequency-noise behaviors in a-IGZO thin-film transistors with Al2O3 and Al2O3/SiNx gate dielectrics," IEEE Electron. Dev. Lett. 30, 828-830 (2009).
41. P. Barquinha et al., "Performance and stability of low temperature transparent thin-film transistors using amorphous multicomponent dielectrics," J. Electrochem. Soc. 156, H824-H831 (2009).
42. G. Bernardo et al., "Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature," Synth. Met. 159, 1112-1115 (2009).
43. H. Aguas et al., "Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz," Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 42, 4935-4942 (2003).
44. L. Pereira et al., "Sputtered multicomponent amorphous dielectrics for transparent electronics," Phys. Status Solidi A: Appl. Mater. 206, 2149-2154 (2009).
45. J. I. Pankove, Optical Processes in Semiconductors (Dover Publications, Inc., New York, 1971).
46. H. Hartnagel et al., Semiconducting Transparent Thin Films (IOP Publishing, Bristol, 1995).
47. Z. L. Pei et al., "Room-temperature co-sputtered HfO2-Al2O3 multicomponent gate dielectrics," Electrochem. Solid-State Lett. 12, G65-G68 (2009).
48. C. R. Kagan and P. Andry, Thin-Film Transistors (Marcel Dekker, Inc., New York, 2003).
49. W. B. Jackson et al., "High-performance flexible zinc tin oxide fieldeffect transistors," Appl. Phys. Lett. 87, 193503-1-193503-3 (2005).
50. J. Park et al., "Source/drain series-resistance effects in amorphous gallium-indium zinc-oxide thin film transistors," IEEE Electron. Dev. Lett. 29, 879-881 (2008).
51. J. Lancaster et al., "Voltage- and light-induced hysteresis effects at the high-κ dielectric-poly(3-hexylthiophene) interface," Appl. Phys. Lett. 90, 103513-1-103513-3 (2007).
52. J.-H. Lee et al., Introduction to Flat Panel Displays (John Wiley & Sons Ltd., West Sussex, UK, 2008).
53. R. B. M. Cross and M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89, 263513-1-263513-3 (2006).
54. J. M. Lee et al., "Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors," Appl. Phys. Lett. 93, 093504-1-093504-3 (2008).
55. S. H. Cha et al., "Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics," Appl. Phys. Lett. 92, 023506-1023506-3 (2008).