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Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages

High-performance InGaZnO thin-film transistors with high- k amorphous Ba0.5Sr0.5TiO3 gate insulator

(3) Kim, J B a Fuentes Hernandez, C a Kippelen, B a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM; FIELD EFFECT TRANSISTORS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; TRANSISTORS; ZINC; ZINC OXIDE;

AND GATES; CAPACITANCE DENSITIES; CHANNEL RESISTANCES; GATE INSULATORS; INDIUM GALLIUM ZINC OXIDES; LOW THRESHOLD VOLTAGES; LOW VOLTAGES; OFF CURRENTS; SATURATION MOBILITIES; SUBTHRESHOLD SLOPES;

THIN FILM TRANSISTORS;

EID: 57849159113 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3054335 Document Type: Article

Times cited : (70)

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