A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Zou, Xiao ^a,b   Fang, Guojia ^b   Yuan, Longyan ^b   Tong, Xingsheng ^a   Zhao, Xingzhong ^b  

^a JIANGHAN UNIVERSITY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; COMPARATIVE STUDIES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GATE LEAKAGE CURRENT DENSITY; HYSTERESIS VOLTAGE; INTERFACE QUALITY; INTERFACE STATE DENSITY; LOW THRESHOLD VOLTAGE; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; NITROGEN INCORPORATION; OFF CURRENT; RADIO-FREQUENCY REACTIVE SPUTTERING; SATURATION MOBILITY;

AMORPHOUS FILMS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; SWITCHING CIRCUITS; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 77951246293     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055006     Document Type: Article

References (24)

1. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
2. Kim M, Jeong J H, Lee H J, Ahn T K, Shin H S, Park J S, Jeong J K, Mo Y G and Kim H D 2007 Appl. Phys. Lett. 90 212114
3. Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T and Hosono H 2006 Appl. Phys. Lett. 89 112123
4. Hayashi R et al 2007 J. Soc. Inf. Disp. 15 915
5. Nomura K, Kamiya T, Hirano M and Hosono H 2009 Appl. Phys. Lett. 95 013502
6. Lee J M, Cho I T, Lee J H and Kwon H I 2008 Appl. Phys. Lett. 93 093504
7. Ahn B D, Shin H S, Kim H J, Park J S and Jeong J K 2008 Appl. Phys. Lett. 93 203506
8. Kim J B, Fuentes H C and Kippelena B 2008 Appl. Phys. Lett. 93 242111
9. Kim J B, Fuentes H C, Potscavage W J Jr, Zhang X H and Kippelen B 2009 Appl. Phys. Lett. 94 142107
10. Cheong W S, Yoon Y S, Shin J H, Hwang C S and Chu H Y 2009 Thin Solid Films 517 4094
11. Lee J M, Cho I T, Lee J H, Cheong W S, Hwang C S and Kwon H I 2009 Appl. Phys. Lett. 94 222112
12. Cho Y J, Shin J H, Bobade S M, Kim Y B and Choi D K 2009 Thin Solid Films 517 4115
13. Dalapati G K, Tong Y, Loh W Y, Mun H K and Cho B J 2007 Appl. Phys. Lett. 90 183510
14. Ok I et al 2006 IEEE Electron Device Lett. 27 145
15. Dalapati G K, Sridhara A, Wong A S W, Chia C K and Chi D Z 2009 Appl. Phys. Lett. 94 073502
16. Wang X J, Zhang L D, Liu M, Zhang J P and He G 2008 Appl. Phys. Lett. 92 122901
17. Liu M, Fang Q, He G, Zhu L Q and Zhang L D 2006 Appl. Surf. Sci. 252 8673
18. Nicollian E H and Brews J R 1982 MOS Physics and Technology (New York: Wiley) p 325
19. Martens K et al 2008 IEEE Trans. Electron Devices 55 547
20. Gao F, Lee S J, Chi D Z, Balakumar S and Kwong D L 2007 Appl. Phys. Lett. 90 252904
21. Kang C S, Cho H J, Onishi K, Nieh R, Choi R, Gopalan S, Krishnan S, Han J H and Lee J C 2002 Appl. Phys. Lett. 81 2593
22. Lysaght P S, Barnett J, Bersuker G I, Woicik J C, Fischer D A, Foran B, Tseng H H and Jammy R 2007 J. Appl. Phys. 101 024105
23. Park J S, Jeong J K, Mo Y G, Kim H D and Kim S I 2007 Appl. Phys. Lett. 90 262106
24. Sato A, Abe K, Hayashi R, Kumomi H, Nomura K, Kamiya T, Hirano M and Hosono H 2009 Appl. Phys. Lett. 94 133502