Low voltage operating InGaZn O4 thin film transistors using high- k MgO- Ba0.6 Sr0.4 Ti O3 composite gate dielectric on plastic substrate

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Kim, Dong Hun ^a   Cho, Nam Gyu ^a   Kim, Ho Gi ^a   Kim, Hyun Suk ^b   Hong, Jae Min ^c   Kim, Il Doo ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE FILMS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OPTICAL DESIGN; OZONE WATER TREATMENT; PLASTIC BOTTLES; PLASTICS; SUBSTRATES; THERMOPLASTICS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION;

AMERICAN INSTITUTE OF PHYSICS (AIP); COMPOSITE THIN FILMS; CURRENT PROPERTIES; HIGH-FIELD-EFFECT-MOBILITY; LOW OPERATION VOLTAGE; LOW-VOLTAGE (LV); ON/OFF CURRENT RATIO; PLASTIC SUBSTRATES; POLYETHYLENE TEREPHTHALATE (PET); ROOM-TEMPERATURE (RT); THIN FILMS TRANSISTORS;

GATE DIELECTRICS;

EID: 48249112642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2954014     Document Type: Article

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