A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Carcia, P F ^a   McLean, R S ^a   Reilly, M H ^a   Crawford, M K ^a   Blanchard, E N ^a   Kattamis, A Z ^b   Wagner, S ^b  

^a DUPONT COMPANY   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL GEOMETRY; GATE DIELECTRICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON NITRIDE; ZINC OXIDE;

COPLANAR GEOMETRY; SILICON NITRIDE GATE DIELECTRICS; SUBSTRATE HEATING; TRANSISTOR CHARACTERISTICS;

THIN FILM TRANSISTORS;

EID: 35348875384     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2786869     Document Type: Article

References (23)

1. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., Appl. Phys. Lett. 0003-6951 10.1063/1.1553997 82, 1117 (2003).
2. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 0003-6951 10.1063/1.1542677 82, 733 (2003).
3. S. Masuda, K. Kitamura, Y. Okumura, and S. Miyatake, J. Appl. Phys. 0021-8979 10.1063/1.1534627 93, 1624 (2003).
4. P. F. Carcia and R. S. McLean, U.S. Patent No. 7,067,843 (27 June 2006).
5. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. 0003-6951 10.1063/1.1843286 86, 013503 (2005).
6. B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, Appl. Phys. Lett. 0003-6951 10.1063/1.2335372 89, 062103 (2006).
7. P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. 0003-6951 10.1063/1.2188379 88, 123509 (2006).
8. J. Kanicki and S. Martin, in Thin Film Transistors, edited by, C. R. Kagan, and, P. Andry, (Dekker, New York, 2003), Chap., pp. 71-137.
9. W. A. MacDonald, K. Rollins, D. MacKerron, R. Eveson, R. A. Rustin, R. Adam, M. K. Looney, T. Yoshida, and K. Hashimoto, SID Int. Symp. Digest Tech. Papers 0003-966X 10.1889/1.2036488 36, 514 (2005).
10. P. Servati, S. Prakash, A. Nathan, and C. Py, J. Vac. Sci. Technol. A 20, 137 (2002). 0734-2101
11. W. Greve, Field-Effect Devices and Application (Prentice Hall, Englewood Cliffs, NJ, 1998), Chap., p. 263 ff.
12. G.. Bersuker, P. Zeitzoff, G. Brown, and H. R. Huff, Mater. Today 1369-7021 10.1016/S1369-7021(04)00286-X 7, 26 (2004).
13. J. Jang, in Thin Film Transistors, edited by C. R. Kagan and P. Andry (Dekker, New York, 2003), Chap., p. 55.
14. H. Gleskova, S. Wagner, V. Gasparik, and P. Kováč, J. Electrochem. Soc. 0013-4651 10.1149/1.1373661 148, G370 (2001).
15. H. Gleskova, S. Wagner, V. Gasparik, and P. Kováč, Appl. Surf. Sci. 175-176, 12 (2001). 0169-4332
16. J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno, and M. Kawasaki, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.42.L347 42, L347 (2003).
17. R. Navamathavan, C. K. Choi, and K. -M. Lee, J. Korean Phys. Soc. 48, 271 (2006).
18. K. Tominaga, S. Iwamura, Y. Shintani, and O. Tada, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.21.688 21, 688 (1982).
19. Y. Sun, J. B. Ketterson, and G. K. L. Wong, Appl. Phys. Lett. 0003-6951 10.1063/1.1316069 77, 2322 (2000).
20. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 0021-8979 10.1063/1.362349 79, 7983 (1996).
21. Y. -J. Lin, C. -L. Tsai, Y. -M. Lu, and C. -J. Liu, J. Appl. Phys. 0021-8979 10.1063/1.2193649 99, 093501 (2006).
22. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys. 0021-8979 10.1063/1.330583 53, 1193 (1982).
23. C. H. Seager and S. M. Meyers, J. Appl. Phys. 0021-8979 10.1063/1.1595147 94, 2888 (2003).