High-performance ingazno thin-film transistors using HfLaO gate dielectric

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1317-1319

  Su, N C ^a   Wang, S J ^a   Chin, Albert ^b,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Nano Electronics Consortium of Taiwan   (Taiwan)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); Equivalent oxide thickness; HfLaO; High k; Thin film transistors

Indexed keywords

AMORPHOUS INDIUM-GALLIUM-ZINC OXIDE (A-IGZO); EQUIVALENT OXIDE THICKNESS; HIGH MOBILITY; K-VALUE; LOW POWER APPLICATION; LOW-VOLTAGE; OPERATION VOLTAGE; SUBTHRESHOLD SWING;

AMORPHOUS FILMS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC; ZINC OXIDE;

INDIUM;

EID: 70549111131     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2033392     Document Type: Article

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