Low leakage current-stacked MgO/Bi1.5Zn1.0Nb 1.5O7 gate insulator- for low voltage ZnO thin film transistors

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Lim, Mi Hwa ^a   Kang, KyongTae ^a   Kim, Ho Gi ^a   Kim, Il Doo ^b   Choi, YongWoo ^c   Tuller, Harry L ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c LG Electronics Inc   (South Korea)

^d Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; LEAKAGE CURRENTS; MAGNESIA; SATURATION (MATERIALS COMPOSITION); SUBSTRATES; THIN FILM TRANSISTORS;

GATE INSULATORS; PLASTIC SUBSTRATES; ROOM TEMPERATURE;

INSULATING MATERIALS;

EID: 33751086142     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387985     Document Type: Article

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