Voltage- and light-induced hysteresis effects at the high-k dielectric-poly(3-hexylthiophene) interface

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Lancaster, J ^a   Taylor, D M ^a   Sayers, P ^a   Gomes, H L ^b  

^a BANGOR UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; HOLE TRAPS; HYSTERESIS; MIS DEVICES; TITANIUM OXIDES; VOLTAGE MEASUREMENT;

FLATBAND VOLTAGE; INSULATOR SEMICONDUCTOR INTERFACES; LIGHT INDUCED HYSTERESIS EFFECTS; POLYMER BAND GAP;

CAPACITANCE MEASUREMENT;

EID: 33947159598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711531     Document Type: Article

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