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Volumn 351, Issue 40-42, 2005, Pages 3191-3194

Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CURRENTS; OXYGEN; PARTIAL PRESSURE; SPUTTERING; ZINC OXIDE;

DRAIN CURRENTS; LEVISON'S EXPRESSION; MESH SHIELDING; RF SPUTTERING;

THIN FILM TRANSISTORS;

EID: 25844519780 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.08.014 Document Type: Article

Times cited : (20)

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