Improved electrical characteristics and reliability of amorphous InGaZnO metal-insulator-semiconductor capacitor with high κ HfOxN y gate dielectric

Microelectronics Reliability

Volumn 50, Issue 7, 2010, Pages 954-958

  Zou, Xiao ^a,b   Fang, Guojia ^b   Yuan, Longyan ^b   Tong, Xingsheng ^a   Zhao, Xingzhong ^b  

^a JIANGHAN UNIVERSITY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; GATE-LEAKAGE CURRENT; HIGH FIELD; HYSTERESIS VOLTAGE; INTERFACE STATE DENSITY; INTERFACIAL BARRIERS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; NITROGEN INCORPORATION; RADIO-FREQUENCY REACTIVE SPUTTERING;

AMORPHOUS FILMS; ARGON; CAPACITORS; GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITRIDES; RELIABILITY; SEMICONDUCTOR INSULATOR BOUNDARIES;

HAFNIUM COMPOUNDS;

EID: 77955716351     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.04.002     Document Type: Conference Paper

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