Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors

Solid-State Electronics

Volumn 50, Issue 5, 2006, Pages 784-787

  Hoffman, R L ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

Thin film transistor; Zinc tin oxide

Indexed keywords

CHANNEL CAPACITY; COMPOSITION; ELECTRIC POTENTIAL; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; STOICHIOMETRY; THERMAL EFFECTS;

CHANNEL LAYERS; CHANNEL STOICHIOMETRY; TURN-ON VOLTAGE; ZINC TIN OXIDE;

THIN FILM TRANSISTORS;

EID: 33744918047     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.004     Document Type: Article

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