Role of high-k gate insulators for oxide thin film transistors

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 3030-3032

  Lee, Sang Yeol ^a   Chang, Seongpil ^a   Lee, Jae Sang ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

a IGZO TFT; High k Oxideoxide

Indexed keywords

GATE INSULATOR; HIGH BREAKDOWN FIELDS; HIGH DIELECTRIC CONSTANTS; HIGH-K GATE INSULATOR; HIGH-K MATERIALS; LOW DIELECTRIC CONSTANTS; ON-CURRENTS; OXIDE THIN FILMS; ROOM TEMPERATURE; ROOM-TEMPERATURE PROCESS;

CAPACITANCE; HAFNIUM COMPOUNDS; PERMITTIVITY; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; ZIRCONIUM ALLOYS;

DIELECTRIC MATERIALS;

EID: 77649286518     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.165     Document Type: Article

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