Properties of MIS capacitors using the atomic-layer-deposited ZnO semiconductor and Al2O3 insulator

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Song, Jaewon ^a   Oh, Him Chan ^a   Park, Tae Joo ^a   Hwang, Cheol Seong ^a   Park, Sang Hee Ko ^b   Yoon, Sung Min ^b   Hwang, Chi Sun ^b  

^a Seoul National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; ATOMIC PHYSICS; ATOMS; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CIVIL AVIATION; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRIC PROPERTIES; ENERGY STORAGE; INSULATION; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL DESIGN; OXYGEN; OZONE WATER TREATMENT; PAPER CAPACITORS; PLASMA DEPOSITION; PLASMAS; PULSED LASER DEPOSITION; SEMICONDUCTING INDIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SWITCHING CIRCUITS; THICK FILMS; TIN; TITANIUM COMPOUNDS; ZINC ALLOYS; ZINC OXIDE;

AL2 O3 FILMS; ATOMIC LAYER DEPOSITIONS; ATOMIC LAYERS; ATOMIC-LAYER-DEPOSITED; C-V CHARACTERISTICS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CARRIER DENSITY; CHE MICAL INTERACTIONS; DEPOSITION CONDITIONS; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; FILM DEPOSITION; FILM-THICKNESS; FULL DEPLETION; GROWTH TIME; INDIUM-TIN OXIDE; INSULATING LAYERS; INTERFACE STATES; INTERFACIAL LAYER; METAL-INSULATOR-SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; OPTIMAL PROPERTIES; OXYGEN FLOW RATE; PLASMA POWERS; SEMICONDUCTING LAYERS; SEMICONDUCTOR PARAMETERS; STACK STRUCTURES; ZNO THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 52649086770     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2971024     Document Type: Article

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