-
1
-
-
0038136910
-
Transparent electronics
-
May
-
J. F. Wager, "Transparent electronics," Science, vol. 300, no. 5623, pp. 1245-1246, May 2003.
-
(2003)
Science
, vol.300
, Issue.5623
, pp. 1245-1246
-
-
Wager, J.F.1
-
2
-
-
0037450269
-
-
P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., Transparent ZnO thin-film transistor fabricated by RF magnetron sputtering, Appl. Phys. Lett., 82, no. 7, pp. 1117-1118, Feb. 2003.
-
P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., "Transparent ZnO thin-film transistor fabricated by RF magnetron sputtering," Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1118, Feb. 2003.
-
-
-
-
3
-
-
16244382410
-
Fully transparent ZnO thin-film transistor produced at room temperature
-
Mar
-
E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Maiques, L. M. N. Pereira, and R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater., vol. 17, no. 5, pp. 590-594, Mar. 2005.
-
(2005)
Adv. Mater
, vol.17
, Issue.5
, pp. 590-594
-
-
Fortunato, E.M.C.1
Barquinha, P.M.C.2
Pimentel, A.C.M.B.G.3
Gonçalves, A.M.F.4
Maiques, A.J.S.5
Pereira, L.M.N.6
Martins, R.F.P.7
-
4
-
-
34547499398
-
High mobility top-gate zinc oxide thin-film transistors (ZnO-TFTs) for active-matrix liquid crystal displays
-
issue 1, Jun
-
T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Hokari, M. Yashida, H. Ishii, and M. Kakegawa, "High mobility top-gate zinc oxide thin-film transistors (ZnO-TFTs) for active-matrix liquid crystal displays," in Proc. SID Symp. Dig. Tech. Papers, Jun. 2006, vol. 37, pp. 18-20. issue 1.
-
(2006)
Proc. SID Symp. Dig. Tech. Papers
, vol.37
, pp. 18-20
-
-
Hirao, T.1
Furuta, M.2
Furuta, H.3
Matsuda, T.4
Hiramatsu, T.5
Hokari, H.6
Yashida, M.7
Ishii, H.8
Kakegawa, M.9
-
5
-
-
34447287373
-
Improved stability of high-performance ZnO/ZnMgO hetero-MISFETs
-
Jul
-
S. Sasa, T. Hayafuji, M. Kawasaki, K. Koike, M. Yano, and M. Inoue, "Improved stability of high-performance ZnO/ZnMgO hetero-MISFETs," IEEE Electron Device Lett., vol. 28, no. 7, pp. 543-545, Jul. 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.7
, pp. 543-545
-
-
Sasa, S.1
Hayafuji, T.2
Kawasaki, M.3
Koike, K.4
Yano, M.5
Inoue, M.6
-
6
-
-
2342540970
-
Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn, Mg)O channel
-
Apr
-
Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, "Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn, Mg)O channel," Appl. Phys. Lett., vol. 84, no. 14, pp. 2685-2687, Apr. 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.14
, pp. 2685-2687
-
-
Kwon, Y.1
Li, Y.2
Heo, Y.W.3
Jones, M.4
Holloway, P.H.5
Norton, D.P.6
Park, Z.V.7
Li, S.8
-
7
-
-
33846061249
-
-
H. Cheng, C. Chen, and C. Tsay, Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method, Appl. Phys. Lett., 90, no. 1, pp. 012 113-1-012 113-3, Jan. 2007.
-
H. Cheng, C. Chen, and C. Tsay, "Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method," Appl. Phys. Lett., vol. 90, no. 1, pp. 012 113-1-012 113-3, Jan. 2007.
-
-
-
-
8
-
-
33749261767
-
-
K. Lee, J. H. Kim, S. Im, C. S. Kim, and H. K. Baik, Low-voltage-driven top-gate ZuO thin-film transistor with polymer/ high-k oxide double-layer dielectric, Appl. Phys. Lett., 89, no. 13, pp. 133 507-1-133 507-3, Sep 2006.
-
K. Lee, J. H. Kim, S. Im, C. S. Kim, and H. K. Baik, "Low-voltage-driven top-gate ZuO thin-film transistor with polymer/ high-k oxide double-layer dielectric," Appl. Phys. Lett., vol. 89, no. 13, pp. 133 507-1-133 507-3, Sep 2006.
-
-
-
-
9
-
-
38349141536
-
-
S. H. Cha, M. S. Oh, K. H. Lee, S. Im, B. H. Lee, and M. M. Sung, Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics, Appl. Phys. Lett., 92, no. 2, pp. 023 506-1-023 506-2, Jan. 2008.
-
S. H. Cha, M. S. Oh, K. H. Lee, S. Im, B. H. Lee, and M. M. Sung, "Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics," Appl. Phys. Lett., vol. 92, no. 2, pp. 023 506-1-023 506-2, Jan. 2008.
-
-
-
-
10
-
-
38749107322
-
Fast thin-film transistor circuits based on amorphous oxide semiconductor
-
Apr
-
M. Ofuji, K. Abe, H. Shimizu, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "Fast thin-film transistor circuits based on amorphous oxide semiconductor," IEEE Electron Device Lett., vol. 28, no. 4, pp. 273-275, Apr. 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.4
, pp. 273-275
-
-
Ofuji, M.1
Abe, K.2
Shimizu, H.3
Kaji, N.4
Hayashi, R.5
Sano, M.6
Kumomi, H.7
Nomura, K.8
Kamiya, T.9
Hosono, H.10
-
11
-
-
37549041732
-
Rapid vapor-phase fabrication of organic-inorganic hybrid superlattices with monolayer precision
-
Nov
-
B. H. Lee, M. K. Ryu, S. Choi, K. H. Lee, S. Im, and M. M. Sung, "Rapid vapor-phase fabrication of organic-inorganic hybrid superlattices with monolayer precision," Appl. Amer. Chem. Soc., vol. 129, no. 51, pp. 16034-16041, Nov. 2007.
-
(2007)
Appl. Amer. Chem. Soc
, vol.129
, Issue.51
, pp. 16034-16041
-
-
Lee, B.H.1
Ryu, M.K.2
Choi, S.3
Lee, K.H.4
Im, S.5
Sung, M.M.6
-
12
-
-
15544362062
-
Electron tunneling in self-assembled monolayers
-
Jan
-
W. Wang, T. Lee, and M. A. Reed, "Electron tunneling in self-assembled monolayers," Rep. Prog. Phys., vol. 68, pp. 523-544, Jan. 2005.
-
(2005)
Rep. Prog. Phys
, vol.68
, pp. 523-544
-
-
Wang, W.1
Lee, T.2
Reed, M.A.3
-
13
-
-
7544228907
-
Suppression of charge carrier tunneling through organic self-assembled monolayers
-
Jun
-
C. Boulas, J. V. Davidovits, F. Rondelez, and D. Vuillaume, "Suppression of charge carrier tunneling through organic self-assembled monolayers," Phys. Rev. Lett., vol. 76, no. 25, pp. 4797-4800, Jun. 1996.
-
(1996)
Phys. Rev. Lett
, vol.76
, Issue.25
, pp. 4797-4800
-
-
Boulas, C.1
Davidovits, J.V.2
Rondelez, F.3
Vuillaume, D.4
-
14
-
-
0035395260
-
High-quality aluminum oxide, gate dielectrics by ultrahigh-vacuum reactive atomic-beam deposition
-
Jul
-
S. Guha, E. Cartier, N. A. Bojarczuk, J. Bruley, L. Gignac, and J. Karasinski, "High-quality aluminum oxide, gate dielectrics by ultrahigh-vacuum reactive atomic-beam deposition," J. Appl. Phys. vol. 90, no. 1, pp. 512-514, Jul. 2001.
-
(2001)
J. Appl. Phys
, vol.90
, Issue.1
, pp. 512-514
-
-
Guha, S.1
Cartier, E.2
Bojarczuk, N.A.3
Bruley, J.4
Gignac, L.5
Karasinski, J.6
-
15
-
-
0032645835
-
2)-based gate insulators
-
May
-
2)-based gate insulators," IBM J. Res. Develop., vol. 43, no. 3, pp. 383-392, May 1999.
-
(1999)
IBM J. Res. Develop
, vol.43
, Issue.3
, pp. 383-392
-
-
Campbell, S.A.1
Kim, H.-S.2
Gilmer, D.C.3
He, B.4
Ma, T.5
Gladfelter, W.L.6
-
17
-
-
34548269175
-
-
J.-M. Choi, J. H. Kim, and S. Im, High-gain pentacene-based inverter achieved through high and low energy ultraviolet treatments, Appl. Phys. Lett., 91, no. 8, pp. 083 504-1-083 504-3, Aug. 2007.
-
J.-M. Choi, J. H. Kim, and S. Im, "High-gain pentacene-based inverter achieved through high and low energy ultraviolet treatments," Appl. Phys. Lett., vol. 91, no. 8, pp. 083 504-1-083 504-3, Aug. 2007.
-
-
-
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