Characteristics of ZnO thin films by means of ALD for the application of transparent TFT

Proceedings of International Meeting on Information Display

Volumn 2, Issue , 2006, Pages 1564-1567

  Park, Sang Hee Ko ^a   Hwang, Chi Sun ^a   Kwack, Ho Sang ^a   Kang, Seung Youl ^a   Lee, Jin Hong ^a   Chu, Hye Yong ^a   Lee, Yong Eui ^b  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; FILM GROWTH; HALL EFFECT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; TEMPERATURE DISTRIBUTION; THIN FILM TRANSISTORS; THIN FILMS;

HALL MEASUREMENT SYSTEM; OXYGEN PLASMA; SATURATION MOBILITY; ZINC OXIDE THIN FILMS WERE;

ZINC OXIDE;

EID: 33847360550     PISSN: 17387558     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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