Impact of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2736-2743

  Remashan, Kariyadan ^a   Hwang, Dae Kue ^a   Park, Seong Ju ^a   Jang, Jae Hyung ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

High refractive silicon nitride; Hydrogenation; Secondary ion mass spectroscopy (SIMS); Zinc oxide (ZnO) thin film transistors (TFTs)

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); HYDROGEN; HYDROGENATION; NITRIDES; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMAS; REFRACTIVE INDEX; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SILICON NITRIDE; THIN FILM TRANSISTORS; ZINC; ZINC ALLOYS; ZINC OXIDE;

CHEMICAL VAPORS; FIELD-EFFECT MOBILITIES; GATE CONFIGURATION; GATE INSULATORS; HIGH REFRACTIVE INDEX; HIGH-REFRACTIVE SILICON NITRIDE; SECONDARY ION MASS SPECTROSCOPY (SIMS); SILICON-NITRIDE GATE DIELECTRICS; ZINC OXIDE (ZNO) THIN-FILM TRANSISTORS (TFTS);

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 53649109662     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003021     Document Type: Article

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