Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 171-174

  Bukhori, Muhammad Faiz ^a   Roy, Scott ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

3 D simulation; MOSFET; Random dopants; Random telegraph signals; Trapping

Indexed keywords

CHARGE TRAPPING; MOSFET DEVICES; NONMETALS; SILICON; STATISTICAL METHODS; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

3-D SIMULATION; AMPLITUDE DISTRIBUTIONS; CURRENT CHANGE; INTERNATIONAL CONFERENCES; MOSFET; MOSFETS; RANDOM DOPANTS; RANDOM TELEGRAPH SIGNALS; STATISTICAL SIMULATIONS; THRESHOLD VOLTAGE SHIFTS; TRAPPING;

CHARGE DISTRIBUTION;

EID: 49049095979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527166     Document Type: Conference Paper

References (11)

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