Local Vth variability and scalability in silicon-on-thin-bOX (SOTB) CMOS with small random-dopant fluctuation

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 835-845

  Sugii, Nobuyuki ^a   Tsuchiya, Ryuta ^a   Ishigaki, Takashi ^a   Morita, Yusuke ^a   Yoshimoto, Hiroyuki ^a   Kimura, Shin'Ichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

Back gate bias; Random dopant fluctuation (RDF); Scaling; Silicon on insulator (SOI) technology; Thin buried oxide (BOX); Threshold voltage (Vth) variability

Indexed keywords

BACK-GATE BIAS; BURIED OXIDES; CHANNEL DOPINGS; DOMINANT FACTOR; DOPANT FLUCTUATION; IMPURITIES IN; LOCAL V; LOCAL VARIATIONS; LOW DOSE; LOW-POWER CONSUMPTION; SHORT-CHANNEL EFFECT; SILICON ON INSULATOR;

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); MICROSENSORS; THRESHOLD VOLTAGE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 77950297252     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2040664     Document Type: Article

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