Analyses of 5σ Vth fluctuation in 65nm-MOSFETs using Takeuchi plot

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 156-157

  Tsunomura, T ^a   Nishida, A ^a   Yano, F ^a   Putra, A T ^c   Takeuchi, K ^a   Inaba, S ^a   Kamohara, S ^a   Terada, K ^b   Hiramoto, T ^a,c   Mogami, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HIROSHIMA CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Random dopant fluctuation; Vth fluctuation

Indexed keywords

RANDOM DOPANT FLUCTUATION; VTH FLUCTUATION; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949110702     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588600     Document Type: Conference Paper

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7. Y. Yoshida et al., IEDM, p.475, 1999.
8. S. B. Herner et al., JAP, p.6182, 1998.