Impact of BOX scaling on 30 nm gate length FD SOI MOSFETs

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 180-182

  Fujiwara, M ^a   Morooka, T ^a   Yasutake, N ^a   Ohuchi, K ^a   Aoki, N ^a   Tanimoto, H ^a   Kondo, M ^a   Miyano, K ^a   Inaba, S ^a   Ishimaru, K ^a   Ishiuchi, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744741285     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563581     Document Type: Conference Paper

References (4)

1. ITRS, 2004.
2. T. Ohtou, et al., Ext. Abs. SSDM, p. 502, 2004.
3. R. Tsuchiya, et al., IEDM Tech. Dig., p. 631, 2004.
4. T. Numata, et al., IEEE Trans. Electron Devices, p. 2161, 2004.