Analysis of extra VT variability sources in NMOS using Takeuchi plot

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 110-111

  Tsunomura, T ^a   Nishida, A ^a   Yano, F ^a   Putra, A T ^c   Takeuchi, K ^a   Inaba, S ^a   Kamohara, S ^a   Terada, K ^b   Mama, T ^c   Hiramoto, T ^a,c   Mogami, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HIROSHIMA CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Boron; Channel dopant; TED; VT variation

Indexed keywords

CHANNEL DEPTH; CHANNEL DOPANT; SUBSTRATE BIAS; TED; VT VARIATION;

BORON COMPOUNDS; PHOSPHORUS;

BORON;

EID: 71049137739     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. K.Takeuchi et al., IEDM, p.467, 2007.
2. T.Tsunomura et al., VLSI, p.156, 2008.
3. T.Mizuno et al., JJAP, vol.35, p.842, 1996.
4. A.Ono et al., IEDM, p.755, 1996.
5. T.Tanaka et al., IEDM, pp.271, 2000.
6. K.Takeuchi et al., IEDM, p.841, 1997.
7. S.Ekbote et al., VLSI, p.160, 2008.
8. A.Ono et al., IEDM, p.227, 1997.